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DSS60601MZ4
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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Features
* * * * * * Ideal for Medium Power Switching or Amplification Applications Complementary PNP Type Available (DSS60600MZ4) Ultra Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
Mechanical Data
* * * * * * *
COLLECTOR 2,4
NEW PRODUCT
Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish -- Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.115 grams (approximate)
3E C4 2C 1B
Pin Out Configuration
1 BASE 3 EMITTER
Top View
Device Schematic
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC Value 100 60 6 12 6 Unit V V V A A
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Collector Current Continuous Collector Current
Thermal Characteristics
Characteristic Power Dissipation (Note 3) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25C Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25C Operating and Storage Temperature Range
Notes: 1. 2. 3. 4.
Symbol PD RJA PD RJA TJ, TSTG
Value 1.2 104 2 62.5 -55 to +150
Unit W C/W W C/W C
No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on Polymide PCB with 330mm2 2 oz. Copper pad layout.
DSS60601MZ4
Document number: DS31587 Rev. 2 - 2
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(c) Diodes Incorporated
DSS60601MZ4 Electrical Characteristics
@TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 100 60 6 150 120 100 50 100 Typ 80 40 26 325 Max 100 50 100 360 40 60 100 220 300 50 0.9 0.9 Unit V V V nA A nA Test Conditions IC = 100A IC = 10mA IE = 100A VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 150C VEB = 6V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A VCE = 2V, IC = 2A VCE = 2V, IC = 6A IC = 0.1A, IB = 2.0mA IC = 1A, IB = 100mA IC = 2A, IB = 200mA IC = 3A, IB = 60mA IC = 6A, IB = 600mA IE = 2A, IB = 200mA IC = 1A, IB = 100mA VCE = 2V, IC = 1A VCE = 10V, IC = 100mA, f = 100MHz VCB = 10V, f = 1MHz VEB = 5V, f = 1MHz
Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage
NEW PRODUCT
Collector-Base Cutoff Current Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
mV
Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance Input Capacitance
Notes:
RCE(SAT) VBE(SAT) VBE(ON) fT Cobo Cibo
m V V MHz pF pF
5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
2.0
100
PD, POWER DISSIPATION (mW)
IC, COLLECTOR CURRENT (A)
1.6
10
Pw = 1ms Pw = 10ms
1.2
1
Pw = 100ms
0.8
0.1
0.4
0.01
0 0 25 50 100 125 75 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature 150
0.001 0.1
1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3)
DSS60601MZ4
Document number: DS31587 Rev. 2 - 2
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December 2008
(c) Diodes Incorporated
DSS60601MZ4
1.4 IC, COLLECTOR CURRENT (mA) 1.2
T A = 85C
1,000
VCE = 2V TA = 150C
1.0 0.8
IB = 5mA
hFE, DC CURRENT GAIN
T A = 25C
NEW PRODUCT
IB = 4mA
100
TA = -55C
0.6 0.4 0.2 0 0
IB = 3mA
IB = 2mA
IB = 1mA
10
1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage
10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current
1
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1
IC/IB = 10
1.2
VCE = 2V
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
1.0
0.1
T A = 150C T A = 85C TA = 25C TA = -55C
0.8
TA = -55C
0.6
TA = 25C
0.01
0.4
T A = 85C
0.2
TA = 150C
0.001 1
10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current
0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1.2
IC/IB = 10
1,000
f = 1MHz
1.0
Cibo
0.8
TA = -55C
CAPACITANCE (pF)
0.6
TA = 25C
100
0.4
T A = 85C
TA = 150C
0.2 0 1
10
Cobo
10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current
0.1
1 10 100 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Capacitance Characteristics
DSS60601MZ4
Document number: DS31587 Rev. 2 - 2
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December 2008
(c) Diodes Incorporated
DSS60601MZ4
1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz)
100
NEW PRODUCT
10
VCE = 10V f = 100MHz
1 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Gain-Bandwidth Product vs. Collector Current
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05
D = 0.9 RJA(t) = r(t) * RJA RJA = 98C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
D = Single Pulse
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response
10
100
1,000
Ordering Information
Part Number DSS60601MZ4-13
Notes:
(Note 6) Case SOT-223 Packaging 2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YWW ZNS66
ZNS66 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52
DSS60601MZ4
Document number: DS31587 Rev. 2 - 2
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December 2008
(c) Diodes Incorporated
DSS60601MZ4 Package Outline Dimensions
SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e -- -- 4.60 e1 -- -- 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm
NEW PRODUCT
A A1
Suggested Pad Layout
X1 Y1
C1
Y2 C2 X2
Dimensions X1 X2 Y1 Y2 C1 C2
Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DSS60601MZ4
Document number: DS31587 Rev. 2 - 2
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December 2008
(c) Diodes Incorporated

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